Abstract

The method of digital modeling investigates influence of temperature on photoelectric processes in silicon solar cells. Feature of program system describes “Sentaurus TCAD” which is allowed to model silicon solar cells with flat p-n-junction. Results of research are received in the form of visual pictures of processing of volume of silicon with p-n-junction, processes  of  photogeneration  of  nonequilibrium  carriers  of  a  charge  at  illumination  and  thermal  emissions  at  the  account  of  various  mechanisms  of  their  recombination,  and  loading of I-V characteristic of solar cell at various temperatures. Results of estimation temperature factors of a current of short circuit Jsc, open circuit voltage Uoc, fill factor of I-V FF,  the  maximum  power  Pm and efficiency ?  for  silicon  solar  cells  without  and  with  nanoparticles  of  metal  are  compared.  It  is  noticed  that  despite  high  values  of  the  basic  photoelectric parameters of the solar cells containing nanoparticles of metal, than without them, temperature factors of target power and efficiency worsen a little. Means, in such cases  acceptance  of  measures  for  cooling  of  solar  cells  is  required.  On  the  other  hand,  higher  photosensitivity  of  plasmon  solar  cells  is  shown  at  low  temperatures.  There  is  a  perspective  possibility  of  creation  high-sensitivity  (plasmon)  photosensors  for  a  special  purpose, working at low temperatures.

Keywords

photovoltaic, silicon, solar cell, simulation, temperature